JANTX2N3867
vs
JANTXV2N3867
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
VPT COMPONENTS
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.75
Case Connection
COLLECTOR
Collector Current-Max (IC)
3 A
3 A
Collector-Base Capacitance-Max
120 pF
Collector-Emitter Voltage-Max
40 V
40 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
25
20
Fall Time-Max (tf)
100 ns
JEDEC-95 Code
TO-5
TO-5
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
200 °C
Operating Temperature-Min
-65 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
1 W
6 W
Power Dissipation-Max (Abs)
10 W
1 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-PRF-19500
MIL-19500/350
Rise Time-Max (tr)
65 ns
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
600 ns
600 ns
Turn-on Time-Max (ton)
100 ns
100 ns
VCEsat-Max
1.5 V
Base Number Matches
11
11
JESD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Transition Frequency-Nom (fT)
60 MHz