JANTX1N6491US
vs
1N6491USE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
MICROSEMI CORP
|
| Package Description |
HERMETIC SEALED, GLASS, D-5A, 2 PIN
|
O-LELF-R2
|
| Reach Compliance Code |
unknown
|
compliant
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
1.5 W
|
1.5 W
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500/406F
|
|
| Reference Voltage-Nom |
5.6 V
|
5.6 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
45 mA
|
45 mA
|
| Base Number Matches |
1
|
1
|
| Rohs Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.50
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Dynamic Impedance-Max |
|
5 Ω
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Terminal Finish |
|
PURE MATTE TIN
|
|
|
|
Compare JANTX1N6491US with alternatives
Compare 1N6491USE3 with alternatives