JANTX1N6475
vs
1N5648A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
compliant
unknown
Breakdown Voltage-Min
43.7 V
Case Connection
ISOLATED
CATHODE
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-MALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
1 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/552C
Rep Pk Reverse Voltage-Max
40.3 V
36.8 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
15
Package Description
HERMETIC SEALED, GLASS TO METAL, DO-13, 2 PIN
Breakdown Voltage-Nom
43 V
Clamping Voltage-Max
59.3 V
JEDEC-95 Code
DO-13
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
5 µA
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