JANTX1N6471
vs
1N6471E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SEMTECH CORP
MICROSEMI CORP
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Pin Count
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Factory Lead Time
18 Weeks
Samacsys Manufacturer
SEMTECH
Additional Feature
HIGH RELIABILITY
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
Breakdown Voltage-Min
13.6 V
13.6 V
Breakdown Voltage-Nom
13 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
22.6 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Qualification Status
Qualified
Reference Standard
MIL-19500/552
Rep Pk Reverse Voltage-Max
12 V
12 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
2
Power Dissipation-Max
3 W
Compare JANTX1N6471 with alternatives
Compare 1N6471E3 with alternatives