JANTX1N6165A
vs
JANTXV1N6165A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
SEMICON COMPONENTS INC
Reach Compliance Code
compliant
unknown
Category CO2 Kg
8.54
8.54
Compliance Temperature Grade
Military: -55C to +175C
Candidate List Date
2020-06-25
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.10
Qualifications
DLA
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
86.5 V
86.5 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
5 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
69.2 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
6
6
ECCN Code
EAR99
HTS Code
8541.10.00.50
Compare JANTX1N6165A with alternatives
Compare JANTXV1N6165A with alternatives