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JANTX1N6132A vs 1N6132AE3 feature comparison

JANTX1N6132A Semicon Components Inc

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1N6132AE3 Microsemi Corporation

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Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMICON COMPONENTS INC MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 114 V 114 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 165.1 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-LALF-W2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 2 W
Qualification Status Not Qualified
Reference Standard MIL-19500/516
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 1 1
Rohs Code Yes
Package Description O-LALF-W2
Additional Feature HIGH RELIABILITY
JESD-609 Code e3
Rep Pk Reverse Voltage-Max 91.2 V
Terminal Finish MATTE TIN
Diodes » Transient Suppressors
Diodes » Transient Suppressors

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Compare 1N6132AE3 with alternatives