JANTX1N6132 vs JAN1N6132 feature comparison

JANTX1N6132 Microchip Technology Inc

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JAN1N6132 Semtech Corporation

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Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC SEMTECH CORP
Reach Compliance Code compliant unknown
Breakdown Voltage-Min 108.3 V 114 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0 e2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 2
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 1.5 W
Qualification Status Qualified Qualified
Surface Mount NO NO
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD TIN COPPER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 4 4
Package Description HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer SEMTECH
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Nom 120 V
Clamping Voltage-Max 173.355 V
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reference Standard MIL-19500/516
Rep Pk Reverse Voltage-Max 91.2 V
Reverse Current-Max 1 µA

Compare JANTX1N6132 with alternatives

Compare JAN1N6132 with alternatives