JANTX1N6132
vs
JAN1N6132
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
MICROSEMI CORP
Reach Compliance Code
unknown
not_compliant
Breakdown Voltage-Min
108.3 V
108.3 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-XALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Qualified
Not Qualified
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
4
Pbfree Code
No
Rohs Code
No
Pin Count
2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Samacsys Manufacturer
Microsemi Corporation
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare JANTX1N6132 with alternatives
Compare JAN1N6132 with alternatives