JANTX1N6114 vs JANS1N6114 feature comparison

JANTX1N6114 Semicon Components Inc

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JANS1N6114 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMICON COMPONENTS INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Min 19.855 V 20.9 V
Breakdown Voltage-Nom 22 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 32.025 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 2 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/516 MIL-19500/516
Rep Pk Reverse Voltage-Max 17 V 16.7 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 2 4
Pbfree Code No
Package Description HERMETIC SEALED, GLASS, E PACKAGE-2
Additional Feature HIGH RELIABILITY

Compare JANTX1N6114 with alternatives

Compare JANS1N6114 with alternatives