JANTX1N6114
vs
JANS1N6114
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SEMICON COMPONENTS INC
MICROSEMI CORP
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Min
19.855 V
20.9 V
Breakdown Voltage-Nom
22 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
32.025 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
2 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
MIL-19500/516
Rep Pk Reverse Voltage-Max
17 V
16.7 V
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
4
Pbfree Code
No
Package Description
HERMETIC SEALED, GLASS, E PACKAGE-2
Additional Feature
HIGH RELIABILITY
Compare JANTX1N6114 with alternatives
Compare JANS1N6114 with alternatives