JANTX1N6112A
vs
JANTXV1N6146
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
Breakdown Voltage-Min
16.2 V
Breakdown Voltage-Nom
18 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
26.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
13.7 V
11.4 V
Reverse Current-Max
1 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
Tin/Lead (Sn/Pb)
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
6
Additional Feature
HIGH RELIABILITY
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Power Dissipation-Max
3 W
Reference Standard
MIL-19500
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