JANTX1N6112A vs JAN1N6146 feature comparison

JANTX1N6112A Bkc Semiconductors Inc

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JAN1N6146 Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer BKC SEMICONDUCTORS INC MICROSEMI CORP
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 16.2 V
Breakdown Voltage-Nom 18 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 26.3 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 13.7 V 11.4 V
Reverse Current-Max 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 6
Pbfree Code No
Package Description HERMETIC SEALED, GLASS, C PACKAGE-2
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 3 W
Reference Standard MIL-19500

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