JANTX1N6111 vs P6KE110AHE3/54 feature comparison

JANTX1N6111 Bkc Semiconductors Inc

Buy Now Datasheet

P6KE110AHE3/54 New Jersey Semiconductor Products Inc

Buy Now Datasheet
Rohs Code No
Part Life Cycle Code Transferred Active
Ihs Manufacturer BKC SEMICONDUCTORS INC NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code unknown unknown
Breakdown Voltage-Min 14.4 V 105 V
Breakdown Voltage-Nom 16 V 110.5 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 23.4 V 152 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 O-XALF-W2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 12.2 V 94 V
Reverse Current-Max 20 µA 1 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 3
Package Description DO-15, 2 PIN
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 116 V
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-204AC
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Power Dissipation-Max 5 W
Reference Standard AEC-Q101; UL RECOGNIZED
Reverse Test Voltage 94 V

Compare P6KE110AHE3/54 with alternatives