JANTX1N6106A
vs
1N6106A
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
MICROSEMI CORP
SENSITRON SEMICONDUCTOR
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Pin Count
2
2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
Microsemi Corporation
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
9.5 V
9.5 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
7.6 V
7.6 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
16
Date Of Intro
1998-01-01
Clamping Voltage-Max
14.5 V
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reverse Current-Max
20 µA
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare JANTX1N6106A with alternatives
Compare 1N6106A with alternatives