JANTX1N6105
vs
1N6150AE3
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSEMI CORP
Reach Compliance Code
compliant
compliant
Breakdown Voltage-Min
8.2175 V
20.9 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-LALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
UNSPECIFIED
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
3 W
3 W
Qualification Status
Qualified
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
9
1
Package Description
O-LALF-W2
ECCN Code
EAR99
HTS Code
8541.10.00.50
Additional Feature
HIGH RELIABILITY
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Rep Pk Reverse Voltage-Max
16.7 V
Compare JANTX1N6105 with alternatives
Compare 1N6150AE3 with alternatives