JANTX1N6105 vs 1N6150AE3 feature comparison

JANTX1N6105 Microchip Technology Inc

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1N6150AE3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code compliant compliant
Breakdown Voltage-Min 8.2175 V 20.9 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-LALF-W2
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material UNSPECIFIED GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 3 W 3 W
Qualification Status Qualified
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 9 1
Package Description O-LALF-W2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Rep Pk Reverse Voltage-Max 16.7 V

Compare JANTX1N6105 with alternatives

Compare 1N6150AE3 with alternatives