JANTX1N6053A
vs
1N6053A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
SEMICON COMPONENTS INC
NEW ENGLAND SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Max
41 V
Breakdown Voltage-Min
37.1 V
Breakdown Voltage-Nom
39 V
39 V
Case Connection
CATHODE
ISOLATED
Clamping Voltage-Max
53.9 V
53.9 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-MALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
UNSPECIFIED
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
1 W
1 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500/507
Rep Pk Reverse Voltage-Max
33 V
33.3 V
Reverse Current-Max
5 µA
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
16
Package Description
HERMETIC SEALED, GLASS TO METAL, DO-13, 2 PIN
JEDEC-95 Code
DO-13
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