JANTX1N6052A vs 1N6052ATR feature comparison

JANTX1N6052A Semicon Components Inc

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1N6052ATR Microsemi Corporation

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Rohs Code No No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SEMICON COMPONENTS INC MICROSEMI CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 37.8 V 37.8 V
Breakdown Voltage-Min 34.2 V 34.2 V
Breakdown Voltage-Nom 36 V
Case Connection CATHODE ISOLATED
Clamping Voltage-Max 49.9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-XALF-W2 O-MALF-W2
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 175 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material UNSPECIFIED METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/507
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 5 µA
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 7 1
Pbfree Code No
Part Package Code DO-13
Package Description HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN
Pin Count 2
JEDEC-95 Code DO-202AA

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Compare 1N6052ATR with alternatives