JANTX1N5907 vs JAN1N5907 feature comparison

JANTX1N5907 Silicon Transistor Corporation

Buy Now Datasheet

JAN1N5907 Silicon Transistor Corporation

Buy Now Datasheet
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer SILICON TRANSISTOR CORP SILICON TRANSISTOR CORP
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 6.75 V 6.75 V
Breakdown Voltage-Min 6 V 6 V
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-13 DO-13
JESD-30 Code O-MALF-W2 O-MALF-W2
Non-rep Peak Rev Power Dis-Max 1500 W 1500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1 W 1 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/500 MIL-19500/500
Surface Mount NO NO
Technology AVALANCHE AVALANCHE
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 7 7
Rep Pk Reverse Voltage-Max 5 V

Compare JANTX1N5907 with alternatives

Compare JAN1N5907 with alternatives