JANTX1N5809CB
vs
1N5809-TR
feature comparison
Pbfree Code |
No
|
No
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
Package Description |
O-LALF-W2
|
HERMETIC SEALED, GLASS, E, 2 PIN
|
Pin Count |
2
|
2
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.80
|
8541.10.00.80
|
Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
Application |
ULTRA FAST RECOVERY
|
GENERAL PURPOSE
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
O-LALF-W2
|
O-GALF-W2
|
JESD-609 Code |
e0
|
e0
|
Non-rep Pk Forward Current-Max |
125 A
|
125 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Temperature-Max |
175 °C
|
|
Operating Temperature-Min |
-65 °C
|
|
Output Current-Max |
3 A
|
6 A
|
Package Body Material |
GLASS
|
CERAMIC, GLASS-SEALED
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/742
|
|
Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
Reverse Recovery Time-Max |
0.03 µs
|
30 µs
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
AXIAL
|
AXIAL
|
Base Number Matches |
2
|
1
|
|
|
|
Compare JANTX1N5809CB with alternatives
Compare 1N5809-TR with alternatives