JANTX1N5806US
vs
JANS1N5806US
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
BKC SEMICONDUCTORS INC
|
Reach Compliance Code |
compliant
|
unknown
|
Factory Lead Time |
24 Weeks
|
|
Samacsys Manufacturer |
Microchip
|
|
Application |
ULTRA FAST RECOVERY POWER
|
FAST RECOVERY
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
JESD-30 Code |
O-LELF-R2
|
O-MELF-R2
|
JESD-609 Code |
e0
|
e0
|
Non-rep Pk Forward Current-Max |
35 A
|
35 A
|
Number of Elements |
1
|
1
|
Number of Phases |
1
|
1
|
Number of Terminals |
2
|
2
|
Output Current-Max |
2.5 A
|
2.5 A
|
Package Body Material |
GLASS
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Qualification Status |
Qualified
|
Not Qualified
|
Reference Standard |
MIL-19500/477F
|
MIL-19500/477
|
Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
2
|
1
|
ECCN Code |
|
EAR99
|
HTS Code |
|
8541.10.00.80
|
Forward Voltage-Max (VF) |
|
0.875 V
|
Operating Temperature-Max |
|
175 °C
|
Power Dissipation-Max |
|
3 W
|
|
|
|
Compare JANTX1N5806US with alternatives
Compare JANS1N5806US with alternatives