JANTX1N5651A
vs
1.5KE47HB0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Breakdown Voltage-Max
58.8 V
51.7 V
Breakdown Voltage-Min
53.2 V
42.3 V
Breakdown Voltage-Nom
56 V
47 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
77 V
67.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/500
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
48 V
38.1 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
7
1
Package Description
O-PALF-W2
Additional Feature
EXCELLENT CLAMPING CAPABILITY
JEDEC-95 Code
DO-201
Compare JANTX1N5651A with alternatives
Compare 1.5KE47HB0G with alternatives