JANTX1N5611
vs
SMCG13A-M3/9AT
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
compliant
not_compliant
Category CO2 Kg
8.54
Compliance Temperature Grade
Military: -55C to +175C
Candidate List Date
2020-06-25
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.10
Qualifications
DLA
Breakdown Voltage-Min
43.7 V
14.4 V
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
R-PDSO-G2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
3 W
6.5 W
Qualification Status
Qualified
Reference Standard
MIL-19500/434C
UL RECOGNIZED
Rep Pk Reverse Voltage-Max
40.3 V
13 V
Surface Mount
NO
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
GULL WING
Terminal Position
AXIAL
DUAL
Base Number Matches
1
1
Factory Lead Time
8 Weeks
Breakdown Voltage-Max
15.9 V
Breakdown Voltage-Nom
15.15 V
Clamping Voltage-Max
21.5 V
JEDEC-95 Code
DO-215AB
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare JANTX1N5611 with alternatives
Compare SMCG13A-M3/9AT with alternatives