JANTX1N5556
vs
1.5KE47HB0G
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SEMICON COMPONENTS INC
TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
TEMPERATURE COEFFICIENT IS DERIVED FROM MINIMUM BREAK-DOWN VOLTAGE
EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Min
43.7 V
42.3 V
Breakdown Voltage-Nom
44 V
47 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
63.5 V
67.8 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-XALF-W2
O-PALF-W2
JESD-609 Code
e0
e3
Non-rep Peak Rev Power Dis-Max
1500 W
1500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
UNSPECIFIED
PLASTIC/EPOXY
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
1 W
5 W
Qualification Status
Not Qualified
Reference Standard
MIL-19500/434
AEC-Q101; UL RECOGNIZED
Rep Pk Reverse Voltage-Max
40 V
38.1 V
Reverse Current-Max
5 µA
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
1
1
Package Description
O-PALF-W2
Breakdown Voltage-Max
51.7 V
JEDEC-95 Code
DO-201
Compare JANTX1N5556 with alternatives
Compare 1.5KE47HB0G with alternatives