JANTX1N5530B vs 1N5530B(DO35)E3 feature comparison

JANTX1N5530B Knox Semiconductor Inc

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1N5530B(DO35)E3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer KNOX SEMICONDUCTORS INC MICROSEMI CORP
Package Description HERMETIC SEALED, GLASS PACKAGE-2 O-LALF-W2
Reach Compliance Code unknown compliant
Additional Feature LOW NOISE LOW VOLTAGE AVALANCHE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 60 Ω
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.25 W
Qualification Status Not Qualified
Reference Standard MIL-19500/437
Reference Voltage-Nom 10 V 10 V
Reverse Current-Max 0.05 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Finish TIN LEAD
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Temp Coeff-Max 7.5 mV/°C
Voltage Tol-Max 5% 5%
Working Test Current 1 mA 1 mA
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
JEDEC-95 Code DO-35

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