JANTX1N5312UR-1 vs JAN1N5312UR feature comparison

JANTX1N5312UR-1 Microsemi Corporation

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JAN1N5312UR Compensated Devices Inc

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP COMPENSATED DEVICES INC
Part Package Code DO-213AB
Package Description HERMETIC SEALED, GLASS, LL41, MELF-2 HERMETIC SEALED PACKAGE-2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Samacsys Manufacturer Microsemi Corporation
Additional Feature METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE
JEDEC-95 Code DO-213AB DO-213AB
JESD-30 Code O-LELF-R2 O-XELF-R2
JESD-609 Code e0
Limiting Voltage-Max 2.6 V 2.6 V
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500 MIL-19500/463G
Regulation Current-Nom (Ireg) 3.9 mA 3.9 mA
Surface Mount YES YES
Technology FIELD EFFECT FIELD EFFECT
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND WRAP AROUND
Terminal Position END END
Base Number Matches 1 2
Rep Pk Reverse Voltage-Max 100 V

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Compare JAN1N5312UR with alternatives