JANTX1N5312UR-1
vs
1N5312UR-1E3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
HERMETIC SEALED, GLASS, LL41, MELF-2
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS, LL41, MELF-2
|
| Reach Compliance Code |
compliant
|
compliant
|
| Factory Lead Time |
41 Weeks, 4 Days
|
21 Weeks
|
| Additional Feature |
METALLURGICALLY BONDED
|
METALLURGICALLY BONDED
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
CURRENT REGULATOR DIODE
|
CURRENT REGULATOR DIODE
|
| JEDEC-95 Code |
DO-213AB
|
DO-213AB
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
|
| Limiting Voltage-Max |
2.6 V
|
2.6 V
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500
|
|
| Regulation Current-Nom (Ireg) |
3.9 mA
|
3.9 mA
|
| Rep Pk Reverse Voltage-Max |
100 V
|
100 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
FIELD EFFECT
|
FIELD EFFECT
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
Microchip
|
|
|
|
Compare JANTX1N5312UR-1 with alternatives
Compare 1N5312UR-1E3 with alternatives