JANTX1N4371DUR-1
vs
BZV55-C2V4,115
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
VPT COMPONENTS
|
NXP SEMICONDUCTORS
|
| Package Description |
SOD-80, MELF-2
|
HERMETIC SEALED, GLASS PACKAGE-2
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Additional Feature |
METALLURGICALLY BONDED
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| Dynamic Impedance-Max |
30 Ω
|
100 Ω
|
| Forward Voltage-Max (VF) |
1.1 V
|
|
| JEDEC-95 Code |
DO-213AA
|
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
260
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.4 W
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500
|
|
| Reference Voltage-Nom |
2.7 V
|
2.4 V
|
| Reverse Current-Max |
60 µA
|
50 µA
|
| Reverse Test Voltage |
1 V
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Voltage Tol-Max |
1%
|
5%
|
| Working Test Current |
20 mA
|
5 mA
|
| Base Number Matches |
8
|
2
|
| Part Package Code |
|
MELF
|
| Pin Count |
|
2
|
| Manufacturer Package Code |
|
SOD80C
|
| Factory Lead Time |
|
4 Weeks
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
TIN
|
| Voltage Temp Coeff-Max |
|
|
|
|
|
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