JANSP2N5152
vs
JANTXV2N5152U3
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
VPT COMPONENTS
|
| Package Description |
TO-39, 3 PIN
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Factory Lead Time |
22 Weeks
|
|
| Additional Feature |
HIGH RELIABILITY
|
HIGH RELIABILITY
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
2 A
|
2 A
|
| Collector-Base Capacitance-Max |
250 pF
|
250 pF
|
| Collector-Emitter Voltage-Max |
80 V
|
80 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
20
|
20
|
| JEDEC-95 Code |
TO-205AD
|
|
| JESD-30 Code |
O-MBCY-W3
|
R-XBCC-N3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
METAL
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
CYLINDRICAL
|
CHIP CARRIER
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Power Dissipation-Max (Abs) |
10 W
|
100 W
|
| Qualification Status |
Qualified
|
Qualified
|
| Reference Standard |
MIL-19500; RH - 30K Rad(Si)
|
MIL-PRF-19500
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
WIRE
|
NO LEAD
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
1500 ns
|
1500 ns
|
| Turn-on Time-Max (ton) |
500 ns
|
500 ns
|
| VCEsat-Max |
1.5 V
|
1.5 V
|
| Base Number Matches |
3
|
1
|
| Fall Time-Max (tf) |
|
500 ns
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JANSP2N5152 with alternatives
Compare JANTXV2N5152U3 with alternatives