JANS2N5416
vs
JANTX2N5416
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
NEW ENGLAND SEMICONDUCTOR
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.29.00.95
|
| Collector Current-Max (IC) |
0.001 A
|
1 A
|
| Collector-Emitter Voltage-Max |
300 V
|
300 V
|
| JEDEC-95 Code |
TO-5
|
TO-5
|
| JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MILITARY STANDARD (USA)
|
MIL
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
6
|
12
|
| Collector-Base Capacitance-Max |
|
15 pF
|
| Configuration |
|
SINGLE
|
| DC Current Gain-Min (hFE) |
|
30
|
| Operating Temperature-Max |
|
175 °C
|
| Polarity/Channel Type |
|
PNP
|
| Power Dissipation Ambient-Max |
|
1.5 W
|
| Power Dissipation-Max (Abs) |
|
10 W
|
| Transition Frequency-Nom (fT) |
|
15 MHz
|
| VCEsat-Max |
|
2 V
|
|
|
|
Compare JANS2N5416 with alternatives