JANS2N5152U3
vs
JANSD2N5152U3
feature comparison
All Stats
Differences Only
Rohs Code
No
No
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Factory Lead Time
22 Weeks
22 Weeks
Category CO2 Kg
8.8
8.8
Compliance Temperature Grade
Military: -65C to +200C
Military: -65C to +200C
Candidate List Date
2020-06-25
2020-06-25
Conflict Mineral Status
DRC Conflict Free
DRC Conflict Free
Conflict Mineral Status Source
CMRT V5.10
CMRT V5.10
Qualifications
DLA, Space
DLA, Rad Hard, Space
Collector Current-Max (IC)
2 A
2 A
Collector-Base Capacitance-Max
250 pF
250 pF
Collector-Emitter Voltage-Max
80 V
80 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
20
20
Fall Time-Max (tf)
500 ns
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
200 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
1 W
1 W
Power Dissipation-Max (Abs)
10 W
10 W
Qualification Status
Qualified
Qualified
Reference Standard
MIL-PRF-19500
MIL-19500; RH - 10K Rad(Si)
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
1500 ns
1500 ns
Turn-on Time-Max (ton)
500 ns
500 ns
VCEsat-Max
1.5 V
1.5 V
Base Number Matches
4
2
Additional Feature
HIGH RELIABILITY
Case Connection
COLLECTOR
Transistor Application
SWITCHING
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