JANS1N6329US
vs
1N6329USE3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
MICROSEMI CORP
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
ZENER DIODE
|
ZENER DIODE
|
| JESD-30 Code |
O-XELF-R2
|
O-LELF-R2
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
175 °C
|
175 °C
|
| Operating Temperature-Min |
-65 °C
|
-65 °C
|
| Package Body Material |
UNSPECIFIED
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.5 W
|
0.5 W
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL-19500/533F
|
|
| Reference Voltage-Nom |
16 V
|
16 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
ZENER
|
ZENER
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Voltage Tol-Max |
5%
|
5%
|
| Working Test Current |
7.8 mA
|
7.8 mA
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
Yes
|
| Package Description |
|
O-LELF-R2
|
| Additional Feature |
|
HIGH RELIABILITY, METALLURGICALLY BONDED
|
| Dynamic Impedance-Max |
|
12 Ω
|
|
|
|
Compare JANS1N6329US with alternatives
Compare 1N6329USE3 with alternatives