JANS1N6112US
vs
JAN1N6112US
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
MICROCHIP TECHNOLOGY INC
MICROSS COMPONENTS
Reach Compliance Code
compliant
unknown
Factory Lead Time
32 Weeks
29 Weeks
Breakdown Voltage-Min
17.1 V
16.2 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-MELF-R2
O-XELF-N2
JESD-609 Code
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
METAL
UNSPECIFIED
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
5 W
1.5 W
Qualification Status
Qualified
Qualified
Surface Mount
YES
YES
Technology
AVALANCHE
ZENER
Terminal Finish
TIN LEAD
Terminal Form
WRAP AROUND
NO LEAD
Terminal Position
END
END
Base Number Matches
1
1
Package Description
HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
Breakdown Voltage-Nom
18 V
Clamping Voltage-Max
26.5 V
Reference Standard
MIL-19500/516
Rep Pk Reverse Voltage-Max
13.7 V
Compare JANS1N6112US with alternatives
Compare JAN1N6112US with alternatives