JANS1N6111A
vs
JANTX1N6111A
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
BKC SEMICONDUCTORS INC
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
15.2 V
14.4 V
Breakdown Voltage-Nom
16 V
Case Connection
ISOLATED
ISOLATED
Clamping Voltage-Max
22.3 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2 W
3 W
Qualification Status
Not Qualified
Qualified
Rep Pk Reverse Voltage-Max
12.2 V
12.2 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
2
4
Package Description
HERMETIC SEALED, GLASS PACKAGE-2
Factory Lead Time
25 Weeks
Reference Standard
MIL-19500/516
Compare JANS1N6111A with alternatives
Compare JANTX1N6111A with alternatives