JANS1N6109AUS
vs
1N6109AUS
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MICROSEMI CORP
BKC SEMICONDUCTORS INC
Package Description
MELF-2
Reach Compliance Code
unknown
unknown
Additional Feature
HIGH RELIABILITY
Breakdown Voltage-Min
12.35 V
12.35 V
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LELF-R2
O-MELF-R2
JESD-609 Code
e0
e0
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
GLASS
METAL
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2 W
5 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL-19500
Rep Pk Reverse Voltage-Max
9.9 V
9.9 V
Surface Mount
YES
YES
Technology
AVALANCHE
AVALANCHE
Terminal Finish
TIN LEAD
Tin/Lead (Sn/Pb)
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
7
6
Breakdown Voltage-Nom
13 V
Case Connection
ISOLATED
Clamping Voltage-Max
19 V