JANS1N6109
vs
1N6109
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
MICROCHIP TECHNOLOGY INC
Reach Compliance Code
unknown
compliant
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Breakdown Voltage-Min
12.3 V
12.35 V
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
O-LALF-W2
O-LALF-W2
Non-rep Peak Rev Power Dis-Max
500 W
500 W
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
BIDIRECTIONAL
BIDIRECTIONAL
Power Dissipation-Max
2 W
2 W
Qualification Status
Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
9.9 V
9.9 V
Surface Mount
NO
NO
Technology
AVALANCHE
AVALANCHE
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Base Number Matches
4
21
Rohs Code
Package Description
HERMETIC SEALED, GLASS, E PACKAGE-2
Factory Lead Time
21 Weeks
Breakdown Voltage-Nom
13 V
Clamping Voltage-Max
19 V
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare JANS1N6109 with alternatives
Compare 1N6109 with alternatives