JANS1N6105AUS
vs
JANTXV1N6105AUS
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
MICROSS COMPONENTS
|
MICROCHIP TECHNOLOGY INC
|
Package Description |
HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
|
MELF-2
|
Reach Compliance Code |
unknown
|
compliant
|
Breakdown Voltage-Min |
8.65 V
|
8.65 V
|
Breakdown Voltage-Nom |
9.1 V
|
|
Case Connection |
ISOLATED
|
|
Clamping Voltage-Max |
13.4 V
|
13.4 V
|
Configuration |
SINGLE
|
SINGLE
|
Diode Element Material |
SILICON
|
SILICON
|
Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
JESD-30 Code |
O-XELF-N2
|
O-LELF-R2
|
Non-rep Peak Rev Power Dis-Max |
500 W
|
500 W
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
UNSPECIFIED
|
GLASS
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
LONG FORM
|
LONG FORM
|
Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
Power Dissipation-Max |
1.5 W
|
2 W
|
Qualification Status |
Qualified
|
Qualified
|
Reference Standard |
MIL-19500/516
|
MIL-19500
|
Rep Pk Reverse Voltage-Max |
6.9 V
|
6.9 V
|
Surface Mount |
YES
|
YES
|
Technology |
ZENER
|
AVALANCHE
|
Terminal Form |
NO LEAD
|
WRAP AROUND
|
Terminal Position |
END
|
END
|
Base Number Matches |
1
|
1
|
Rohs Code |
|
No
|
Factory Lead Time |
|
25 Weeks
|
Additional Feature |
|
HIGH RELIABILITY
|
JESD-609 Code |
|
e0
|
Operating Temperature-Max |
|
175 °C
|
Operating Temperature-Min |
|
-55 °C
|
Reverse Current-Max |
|
20 µA
|
Reverse Test Voltage |
|
6.9 V
|
Terminal Finish |
|
TIN LEAD
|
|
|
|
Compare JANS1N6105AUS with alternatives
Compare JANTXV1N6105AUS with alternatives