JANS1N5816
vs
1N5816E3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
MICROSEMI CORP
|
| Package Description |
DO-4, 1 PIN
|
DO-4, 1 PIN
|
| Reach Compliance Code |
unknown
|
compliant
|
| Application |
FAST RECOVERY POWER
|
ULTRA FAST RECOVERY
|
| Case Connection |
CATHODE
|
CATHODE
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JEDEC-95 Code |
DO-4
|
DO-203AA
|
| JESD-30 Code |
O-MUPM-D1
|
O-MUPM-D1
|
| Non-rep Pk Forward Current-Max |
400 A
|
400 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
1
|
1
|
| Output Current-Max |
20 A
|
20 A
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
POST/STUD MOUNT
|
POST/STUD MOUNT
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500/478G
|
|
| Reverse Recovery Time-Max |
0.035 µs
|
0.035 µs
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
SOLDER LUG
|
SOLDER LUG
|
| Terminal Position |
UPPER
|
UPPER
|
| Base Number Matches |
4
|
2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
LEAKAGE CURRENT IS TYPICAL
|
| Forward Voltage-Max (VF) |
|
0.9 V
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Rep Pk Reverse Voltage-Max |
|
150 V
|
| Reverse Current-Max |
|
10 µA
|
|
|
|
Compare JANS1N5816 with alternatives
Compare 1N5816E3 with alternatives