JANS1N5806URS
vs
1N5806URSE3
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| Breakdown Voltage-Min |
160 V
|
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
O-LELF-R2
|
O-LELF-R2
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Output Current-Max |
1 A
|
1 A
|
| Package Body Material |
GLASS
|
GLASS
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500
|
|
| Rep Pk Reverse Voltage-Max |
150 V
|
150 V
|
| Reverse Recovery Time-Max |
0.025 µs
|
0.025 µs
|
| Reverse Test Voltage |
150 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
WRAP AROUND
|
WRAP AROUND
|
| Terminal Position |
END
|
END
|
| Base Number Matches |
3
|
1
|
| Rohs Code |
|
Yes
|
| Package Description |
|
ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, MELF-2
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
HIGH RELIABILITY
|
| Forward Voltage-Max (VF) |
|
0.875 V
|
| Non-rep Pk Forward Current-Max |
|
35 A
|
| Operating Temperature-Max |
|
175 °C
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Technology |
|
AVALANCHE
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare JANS1N5806URS with alternatives
Compare 1N5806URSE3 with alternatives