JANS1N4134-1
vs
1N4134-1E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
M/A-COM TECHNOLOGY SOLUTIONS INC
MICROSEMI CORP
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Additional Feature
LOW NOISE, METALLURGICALLY BONDED
METALLURGICALLY BONDED
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JEDEC-95 Code
DO-35
DO-204AH
JESD-30 Code
O-LALF-W2
O-LALF-W2
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Operating Temperature-Min
-65 °C
-65 °C
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.48 W
Qualification Status
Qualified
Reference Standard
MIL-19500
Reference Voltage-Nom
91 V
91 V
Surface Mount
NO
NO
Technology
ZENER
ZENER
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
WIRE
WIRE
Terminal Position
AXIAL
AXIAL
Voltage Tol-Max
5%
5%
Working Test Current
0.25 mA
0.25 mA
Base Number Matches
9
1
Pbfree Code
Rohs Code
Package Description
O-LALF-W2
Dynamic Impedance-Max
1200 Ω
Compare 1N4134-1E3 with alternatives