JAN2N6766
vs
2N6766
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
ROCHESTER ELECTRONICS LLC
Part Package Code
BFM
Package Description
TO-3, 2 PIN
Pin Count
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
500 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
30 A
30 A
Drain-source On Resistance-Max
0.085 Ω
0.085 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AE
TO-204AE
JESD-30 Code
O-MBFM-P2
O-MBFM-P2
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
120 A
60 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
PIN/PEG
PIN/PEG
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
20
Pbfree Code
Rohs Code
Additional Feature
RADIATION HARDENED
Moisture Sensitivity Level
NOT SPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare JAN2N6766 with alternatives
Compare 2N6766 with alternatives