JAN2N6675
vs
2N6675E3
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
VPT COMPONENTS
|
MICROSEMI CORP
|
| Package Description |
FORMERLY TO-3, 2 PIN
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
15 A
|
15 A
|
| Collector-Base Capacitance-Max |
500 pF
|
|
| Collector-Emitter Voltage-Max |
400 V
|
400 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
8
|
8
|
| Fall Time-Max (tf) |
500 ns
|
|
| JEDEC-95 Code |
TO-204AD
|
TO-3
|
| JESD-30 Code |
O-MBFM-P2
|
O-MBFM-P2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
200 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
6 W
|
|
| Power Dissipation-Max (Abs) |
175 W
|
|
| Qualification Status |
Qualified
|
|
| Reference Standard |
MIL-19500
|
|
| Rise Time-Max (tr) |
600 ns
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
3000 ns
|
|
| Turn-on Time-Max (ton) |
700 ns
|
|
| VCEsat-Max |
5 V
|
|
| Base Number Matches |
9
|
1
|
| Transition Frequency-Nom (fT) |
|
15 MHz
|
|
|
|
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