JAN2N6300 vs 2N6300 feature comparison

JAN2N6300 Microsemi Corporation

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2N6300 Silicon Transistor Corporation

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SILICON TRANSISTOR CORP
Part Package Code TO-66
Package Description TO-66, 2 PIN
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Microsemi Corporation
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 60 V 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON
DC Current Gain-Min (hFE) 100 750
JEDEC-95 Code TO-213AA TO-213
JESD-30 Code O-MBFM-P2 O-MBFM-P2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 200 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500/539
Surface Mount NO NO
Terminal Finish TIN LEAD TIN LEAD
Terminal Form PIN/PEG PIN/PEG
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 4 MHz 4 MHz
Base Number Matches 1 4
Power Dissipation-Max (Abs) 75 W

Compare JAN2N6300 with alternatives

Compare 2N6300 with alternatives