JAN2N5660
vs
TIP111
feature comparison
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
DEFENSE LOGISTICS AGENCY
|
SAMSUNG SEMICONDUCTOR INC
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
2 A
|
2 A
|
| Collector-Emitter Voltage-Max |
200 V
|
80 V
|
| Configuration |
SINGLE
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
40
|
500
|
| JEDEC-95 Code |
TO-66
|
TO-220AB
|
| JESD-30 Code |
O-MBFM-P2
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Package Body Material |
METAL
|
PLASTIC/EPOXY
|
| Package Shape |
ROUND
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/454E
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
THROUGH-HOLE
|
| Terminal Position |
BOTTOM
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Part Package Code |
|
SFM
|
| Package Description |
|
TO-220, 3 PIN
|
| Pin Count |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
50 W
|
|
|
|
Compare JAN2N5660 with alternatives
Compare TIP111 with alternatives