JAN2N4957
vs
BFR505TRL13
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
NXP SEMICONDUCTORS
Package Description
HERMETIC SEALED, METAL CAN-4
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Case Connection
ISOLATED
Collector Current-Max (IC)
0.03 A
0.018 A
Collector-Base Capacitance-Max
0.8 pF
Collector-Emitter Voltage-Max
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
L BAND
JEDEC-95 Code
TO-72
JESD-30 Code
O-MBCY-W4
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
4
3
Package Body Material
METAL
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
CYLINDRICAL
SMALL OUTLINE
Polarity/Channel Type
PNP
NPN
Power Dissipation Ambient-Max
0.2 W
Qualification Status
Qualified
Not Qualified
Reference Standard
MIL-19500/426
Surface Mount
NO
YES
Terminal Form
WIRE
GULL WING
Terminal Position
BOTTOM
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
1
Pbfree Code
Rohs Code
Additional Feature
LOW NOISE, HIGH RELIABILITY
JESD-609 Code
e3
Operating Temperature-Max
175 °C
Power Gain-Min (Gp)
10 dB
Terminal Finish
TIN
Transition Frequency-Nom (fT)
9000 MHz
Compare JAN2N4957 with alternatives
Compare BFR505TRL13 with alternatives