JAN2N3636L
vs
2N3636LE3
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
VPT COMPONENTS
MICROSEMI CORP
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Collector Current-Max (IC)
1 A
1 A
Collector-Base Capacitance-Max
10 pF
Collector-Emitter Voltage-Max
175 V
175 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
30
JEDEC-95 Code
TO-5
TO-5
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
200 °C
Operating Temperature-Min
-65 °C
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
1 W
Power Dissipation-Max (Abs)
1 W
Qualification Status
Qualified
Reference Standard
MIL-19500
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
650 ns
Turn-on Time-Max (ton)
200 ns
VCEsat-Max
0.6 V
Base Number Matches
8
1
Package Description
TO-5, 3 PIN
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