JAN2N3636L vs 2N3636LE3 feature comparison

JAN2N3636L VPT Components

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2N3636LE3 Microsemi Corporation

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Rohs Code No
Part Life Cycle Code Active Transferred
Ihs Manufacturer VPT COMPONENTS MICROSEMI CORP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Collector Current-Max (IC) 1 A 1 A
Collector-Base Capacitance-Max 10 pF
Collector-Emitter Voltage-Max 175 V 175 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 30
JEDEC-95 Code TO-5 TO-5
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 1 W
Power Dissipation-Max (Abs) 1 W
Qualification Status Qualified
Reference Standard MIL-19500
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 650 ns
Turn-on Time-Max (ton) 200 ns
VCEsat-Max 0.6 V
Base Number Matches 8 1
Package Description TO-5, 3 PIN

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