JAN2N3500
vs
2N3500E3
feature comparison
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
RAYTHEON SEMICONDUCTOR
|
MICROSEMI CORP
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| JEDEC-95 Code |
TO-39
|
|
| JESD-30 Code |
O-MBCY-W3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
|
| Package Body Material |
METAL
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
|
| Reference Standard |
MIL
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
WIRE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
9
|
1
|
| Rohs Code |
|
Yes
|
| Collector Current-Max (IC) |
|
0.3 A
|
| DC Current Gain-Min (hFE) |
|
40
|
| Operating Temperature-Max |
|
200 °C
|
| Power Dissipation-Max (Abs) |
|
5 W
|
|
|
|
Compare JAN2N3500 with alternatives
Compare 2N3500E3 with alternatives