JAN2N3019
vs
JANTXV2N3019
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NATIONAL SEMICONDUCTOR CORP
Package Description
CYLINDRICAL, O-MBCY-W3
CYLINDRICAL, O-MBCY-W3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.75
8541.29.00.75
Collector-Base Capacitance-Max
12 pF
12 pF
Collector-Emitter Voltage-Max
80 V
80 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
15
15
JEDEC-95 Code
TO-39
TO-39
JESD-30 Code
O-MBCY-W3
O-MBCY-W3
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
METAL
METAL
Package Shape
ROUND
ROUND
Package Style
CYLINDRICAL
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
7 W
7 W
Qualification Status
Not Qualified
Not Qualified
Reference Standard
MIL
MIL
Surface Mount
NO
NO
Terminal Form
WIRE
WIRE
Terminal Position
BOTTOM
BOTTOM
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
100 MHz
100 MHz
VCEsat-Max
1.5 V
1.5 V
Base Number Matches
2
2
Compare JAN2N3019 with alternatives
Compare JANTXV2N3019 with alternatives