JAN2N2857
vs
2N2857
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
TT ELECTRONICS PLC
|
| Package Description |
HERMETIC SEALED, METAL CAN-4
|
METAL, TO-72, 4 PIN
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.04 A
|
0.04 A
|
| Collector-Base Capacitance-Max |
1 pF
|
1 pF
|
| Collector-Emitter Voltage-Max |
15 V
|
15 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
50
|
| Highest Frequency Band |
ULTRA HIGH FREQUENCY BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JEDEC-95 Code |
TO-72
|
TO-72
|
| JESD-30 Code |
O-MBCY-W4
|
O-MBCY-W4
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
200 °C
|
200 °C
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.2 W
|
|
| Qualification Status |
Qualified
|
Not Qualified
|
| Reference Standard |
MIL-19500/343
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
BOTTOM
|
BOTTOM
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
41
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation Ambient-Max |
|
0.2 W
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
AMPLIFIER
|
| Transition Frequency-Nom (fT) |
|
1000 MHz
|
|
|
|
Compare JAN2N2857 with alternatives
Compare 2N2857 with alternatives