JAN2N2219A vs 2N2219A feature comparison

JAN2N2219A Raytheon Semiconductor

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2N2219A STMicroelectronics

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer RAYTHEON SEMICONDUCTOR STMICROELECTRONICS
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
JEDEC-95 Code TO-39 TO-39
JESD-30 Code O-MBCY-W3 O-MBCY-W3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material METAL METAL
Package Shape ROUND ROUND
Package Style CYLINDRICAL CYLINDRICAL
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified Not Qualified
Reference Standard MIL CECC50002-100
Surface Mount NO NO
Terminal Form WIRE WIRE
Terminal Position BOTTOM BOTTOM
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 3
Pbfree Code Yes
Rohs Code Yes
Part Package Code TO-39
Package Description TO-39, 3 PIN
Pin Count 3
HTS Code 8541.29.00.75
Samacsys Manufacturer STMicroelectronics
Additional Feature LOW LEAKAGE CURRENT
Collector Current-Max (IC) 0.6 A
Collector-Base Capacitance-Max 8 pF
Collector-Emitter Voltage-Max 40 V
DC Current Gain-Min (hFE) 40
JESD-609 Code e3
Operating Temperature-Max 175 °C
Power Dissipation Ambient-Max 3 W
Power Dissipation-Max (Abs) 0.8 W
Terminal Finish MATTE TIN
Transition Frequency-Nom (fT) 300 MHz
Turn-off Time-Max (toff) 285 ns
Turn-on Time-Max (ton) 35 ns
VCEsat-Max 1 V

Compare JAN2N2219A with alternatives

Compare 2N2219A with alternatives