JAN1N966C-1 vs JAN1N968C-1 feature comparison

JAN1N966C-1 Cobham Semiconductor Solutions

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JAN1N968C-1 Microchip Technology Inc

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Part Life Cycle Code Transferred Active
Ihs Manufacturer AEROFLEX/METELICS INC MICROCHIP TECHNOLOGY INC
Reach Compliance Code unknown compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature METALLURGICALLY BONDED METALLURGICALLY BONDED
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-204AH DO-204AH
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.48 W 0.4 W
Qualification Status Not Qualified Qualified
Reference Voltage-Nom 16 V 20 V
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 2% 2%
Working Test Current 7.8 mA 6.2 mA
Base Number Matches 1 2
Rohs Code No
Package Description DO-35, 2 PIN
Factory Lead Time 20 Weeks
Dynamic Impedance-Max 25 Ω
JESD-609 Code e0
Knee Impedance-Max 750 Ω
Moisture Sensitivity Level 1
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C
Reference Standard MIL-19500
Reverse Current-Max 0.5 µA
Reverse Test Voltage 15 V
Terminal Finish TIN LEAD
Voltage Temp Coeff-Max 17.2 mV/°C

Compare JAN1N966C-1 with alternatives

Compare JAN1N968C-1 with alternatives