JAN1N6508 vs MX1N6508 feature comparison

JAN1N6508 Defense Logistics Agency

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MX1N6508 Microsemi Corporation

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer DEFENSE LOGISTICS AGENCY MICROSEMI CORP
Package Description CERAMIC, DIP-14 HERMETIC SEALED, CERAMIC, DIP-14
Reach Compliance Code unknown unknown
Additional Feature HIGH RELIABILITY HIGH RELIABILITY, LOW CAPACITANCE
Configuration COMPLEX COMPLEX
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-116
JESD-30 Code R-CDIP-T14 R-CDIP-T14
Number of Elements 16 16
Number of Terminals 14 14
Output Current-Max 0.5 A
Package Body Material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Power Dissipation-Max 0.6 W 0.6 W
Qualification Status Qualified Not Qualified
Reference Standard MIL-19500/474
Reverse Recovery Time-Max 0.02 µs 0.02 µs
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position DUAL DUAL
Base Number Matches 7 1
Rohs Code No
Part Package Code DIP
Pin Count 14
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Min 60 V
Forward Voltage-Max (VF) 1 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Polarity UNIDIRECTIONAL
Rep Pk Reverse Voltage-Max 60 V
Reverse Current-Max 0.1 µA
Reverse Test Voltage 40 V
Technology AVALANCHE
Terminal Finish TIN LEAD

Compare JAN1N6508 with alternatives

Compare MX1N6508 with alternatives